? 2006 ixys corporation, all rights reserved polar tm high speed igbt with anti-parallel diode for pdp sustain circuit symbol test conditions maximum ratings v ces t j = 25 c to 150 c 330 v v gem 30 v i c25 t c = 25 c, igbt chip capability 85 a i cp t j 150 c, tp 1 s, d 1% 340 a i dp t j 150 c, tp < 10 s40a i c(rms) lead current limit 75 a ssoa v ge = 15 v, t vj = 150 c, r g = 20 i cm = 96 a (rbsoa) clamped inductive load, v ce < 300 v p c t c = 25c 150 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s plastic body 260 m d mounting torque 1.3/10 nm/lb.in. weight 5.5 g ds99610d(02/07) features ? international standard package ? fast t fi for minimum turn off switching losses ? mos gate turn-on - drive simplicity ? positive dvsat/dt for paralleling IXGQ85N33PCD1 v ces = 330 v i cp = 340 a v ce(sat) 2.1 v advance technical information to-3p g = gate c = collector e = emitter tab = collector symbol test conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. v ge(th) i c = 1 ma, v ce = v ge 3.0 6.0 v i ces v ce = 330 v 1 a v ge = 0 v t j = 125 c 200 a i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) v ge = 15v, i c = 50 a 1.43 2.1 v note 1 t j = 125 c 1.47 v i c = 100 a 1.85 3.0 v t j = 125 c 2.0 v (tab) g c e
ixys reserves the right to change limits, test conditions and dimensions. IXGQ85N33PCD1 symboltest conditions characteristic values (t j = 25 c unless otherwise specified) min. typ. max. g fs i c = 43 a, v ce = 10 v 30 49 s c ies 2200 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 155 pf c res 25 pf q g 80 nc q ge i c = 43 a, v ge = 15 v, v ce = 0.5 v ces 15 nc q gc 23 nc t d(on) 20 ns t ri 43 ns t d(off) 87 ns t fi 72 350 ns t d(on) 20 ns t ri 95 ns t d(off) 88 ns t fi 130 ns r thjc 0.833 k/w r thck 0.25 k/w resistive load, t j = 125 c i c = 50 a, v ge = 15 v v ce = 240 v, r g = 5 resistive load, t j = 25 c i c = 50 a, v ge = 15 v v ce = 240 v, r g = 5 note 1: pulse test, t 300 s, duty cycle 2 % reverse diode characteristic values (t j = 25 c unless otherwise specified) symboltest conditions min. typ. max. v f i f = 20a,v ge = 0 v, note 1 2.0 v i f = 40a,v ge = 0 v, note 1 2.8 v r thjc 2.5 k/w t rr 250 ns to-3p (ixtq) outline ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537
? 2006 ixys corporation, all rights reserved IXGQ85N33PCD1 fig. 2. extended output characteristics @ 25 o c 0 30 60 90 120 150 180 210 240 270 300 012345678910 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 9v 5v fig. 3. output characteristics @ 125 o c 0 20 40 60 80 100 120 140 160 180 0 0.5 1 1.5 2 2.5 3 3.5 4 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 1. output characte ristics @ 25 o c 0 20 40 60 80 100 120 140 160 180 0 0.5 1 1.5 2 2.5 3 3.5 4 v c e - volts i c - amperes v ge = 15v 13v 11v 7v 5v 9v fig. 4. dependence of v ce( sat ) on tem perature 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v c e ( sat ) - normalized i c = 85a i c = 42.5a v ge = 15v i c = 170a fig. 5. collector-to-em itter voltage vs. gate-to-em itter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 5 6 7 8 9 1011 1213 1415 v g e - volts v c e - volts t j = 25 o c i c = 170a 85a 42.5a fig. 6. input adm ittance 0 20 40 60 80 100 120 140 160 180 200 4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9 9.5 v g e - volts i c - amperes t j = 125 o c 25 o c - 40 o c
ixys reserves the right to change limits, test conditions and dimensions. IXGQ85N33PCD1 fig. 7. transconductance 0 10 20 30 40 50 60 0 40 80 120 160 200 240 280 i c - amperes g f s - siemens t j = - 40 o c 25 o c 125 o c fig. 10. resistive turn-on rise time vs . gate resistance 20 40 60 80 10 0 12 0 14 0 16 0 18 0 4 6 8 101214161820 r g - ohms t r - nanoseconds t j = 125 o c v ge = 15v v ce = 240v i c = 85a i c = 21a i c = 42.5a fig. 11. resistive turn-on delay tim e vs . gate resistance 19 19 . 5 20 20.5 21 21.5 22 22.5 23 23.5 4 6 8 1012141618202224 r g - ohms t d ( o n ) - nanoseconds t j = 125 o c v ge = 15v v ce = 240v i c = 85a i c = 21a i c = 42.5a fig. 9. resistive turn-on rise time vs . colle ctor curre nt 20 40 60 80 100 120 140 160 20 30 40 50 60 70 80 90 i c - amperes t r - nanoseconds r g = 5 ? v ge = 15v v ce = 240v t j = 125 o c t j = 25 o c fig. 8. resistive turn-on rise time vs. junction tem perature 0 20 40 60 80 100 120 140 160 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanoseconds r g = 5 ? v ge = 15v v ce = 240v i c = 21a i c = 42.5a i c = 85a fig. 12. re s is tive turn-off sw itching tim e vs. junction tem perature 60 80 100 120 140 160 180 25 50 75 100 125 150 t j - degrees centigrade switching time - nanoseconds t d(off) t f - - - - - - r g = 5 ? v ge = 15v v ce = 240v i c = 21a i c = 42.5a i c = 85a i c = 21a 42.5a 85a
? 2006 ixys corporation, all rights reserved fig. 16. gate charge 0 2 4 6 8 10 12 14 16 0 102030 4050607080 q g - nanocoulombs v g e - volts v ce = 150v i c = 42.5a i g = 10m a fig. 17. capacitance 10 100 1000 10000 0 5 10 15 20 25 30 35 40 v c e - volts capacitance - p f c ies c oes c res f = 1 mhz fig. 14. re s is tive turn-off sw itching tim e vs . gate re s is tance 60 80 100 120 140 160 180 200 220 240 0 2 4 6 8 101214161820 r g - ohms switching time - nanoseconds t d(off) , t f - - - - - t j = 125 o c , v ge = 15v v ce = 240v i c = 21a 85a 42.5a 21a 42.5a 85a fig. 15. reverse-bias safe ope r ating are a 0 10 20 30 40 50 60 70 80 90 100 50 100 150 200 250 300 350 v c e - volts i c - amperes t j = 150 o c r g = 20 ? dv/dt < 10v/ns fig. 13. re s is tive turn-off sw itching tim e vs . colle ctor curre nt 40 60 80 100 120 140 160 180 200 20 30 40 50 60 70 80 90 i c - amperes switching time - nanoseconds t j = 125 o c t d(off) , t f - - - - - r g = 5 ? , v ge = 15v v ce = 240v t j = 25 o c 25 o c < t j < 125 o c fig. 18. maximum transient thermal resistance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r ( t h ) j c - oc / w IXGQ85N33PCD1
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